Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.
Identifieur interne : 000C03 ( Main/Exploration ); précédent : 000C02; suivant : 000C04Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.
Auteurs : RBID : pubmed:22322330English descriptors
- KwdEn :
- Arsenicals (chemistry), Arsenicals (radiation effects), Computer Simulation, Crystallization (methods), Gold (chemistry), Indium (chemistry), Indium (radiation effects), Macromolecular Substances (chemistry), Macromolecular Substances (radiation effects), Materials Testing, Models, Chemical, Models, Molecular, Molecular Conformation (radiation effects), Nanostructures (chemistry), Nanostructures (radiation effects), Nanostructures (ultrastructure), Nanotechnology (methods), Particle Size, Surface Properties (radiation effects).
- MESH :
- chemical , chemistry : Arsenicals, Gold, Indium, Macromolecular Substances.
- chemical , radiation effects : Arsenicals, Indium, Macromolecular Substances.
- chemistry : Nanostructures.
- methods : Crystallization, Nanotechnology.
- radiation effects : Molecular Conformation, Nanostructures, Surface Properties.
- ultrastructure : Nanostructures.
- Computer Simulation, Materials Testing, Models, Chemical, Models, Molecular, Particle Size.
Abstract
Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the framework of a theoretical model. An unusual, non-monotonous diameter dependence of the InSb nanowire growth rate is demonstrated experimentally within a range of deposition conditions. Such a behavior is explained by competition between the Gibbs-Thomson effect and different diffusion-induced material fluxes. Theoretical fits to the experimental data obtained at different flux pressures of In and Sb precursors allow us to deduce some important kinetic coefficients. Furthermore, we discuss why the InAs nanowire stem forms in the wurtzite phase while the upper InSb part has a pure zinc blende crystal structure. It is hypothesized that the 30° angular rotation of nanowire when passing from InAs to the InSb part is driven by the lowest surface energy of (1100) wurtzite and (110) zinc blende facets.
DOI: 10.1088/0957-4484/23/9/095602
PubMed: 22322330
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An unusual, non-monotonous diameter dependence of the InSb nanowire growth rate is demonstrated experimentally within a range of deposition conditions. Such a behavior is explained by competition between the Gibbs-Thomson effect and different diffusion-induced material fluxes. Theoretical fits to the experimental data obtained at different flux pressures of In and Sb precursors allow us to deduce some important kinetic coefficients. Furthermore, we discuss why the InAs nanowire stem forms in the wurtzite phase while the upper InSb part has a pure zinc blende crystal structure. It is hypothesized that the 30° angular rotation of nanowire when passing from InAs to the InSb part is driven by the lowest surface energy of (1100) wurtzite and (110) zinc blende facets.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">22322330</PMID><DateCreated><Year>2012</Year><Month>02</Month><Day>21</Day></DateCreated><DateCompleted><Year>2012</Year><Month>07</Month><Day>03</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>23</Volume><Issue>9</Issue><PubDate><Year>2012</Year><Month>Mar</Month><Day>9</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>Modeling of InAs-InSb nanowires grown by Au-assisted chemical beam epitaxy.</ArticleTitle><Pagination><MedlinePgn>095602</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/23/9/095602</ELocationID><Abstract><AbstractText>Interesting phenomena during the Au-assisted chemical beam epitaxy of InAs-InSb nanowire heterostructures have been observed and interpreted within the framework of a theoretical model. An unusual, non-monotonous diameter dependence of the InSb nanowire growth rate is demonstrated experimentally within a range of deposition conditions. Such a behavior is explained by competition between the Gibbs-Thomson effect and different diffusion-induced material fluxes. Theoretical fits to the experimental data obtained at different flux pressures of In and Sb precursors allow us to deduce some important kinetic coefficients. Furthermore, we discuss why the InAs nanowire stem forms in the wurtzite phase while the upper InSb part has a pure zinc blende crystal structure. It is hypothesized that the 30° angular rotation of nanowire when passing from InAs to the InSb part is driven by the lowest surface energy of (1100) wurtzite and (110) zinc blende facets.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Lugani</LastName><ForeName>L</ForeName><Initials>L</Initials><Affiliation>NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Pisa, Italy. lorenzo.lugani@epfl.ch</Affiliation></Author><Author ValidYN="Y"><LastName>Ercolani</LastName><ForeName>D</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Sorba</LastName><ForeName>L</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Sibirev</LastName><ForeName>N V</ForeName><Initials>NV</Initials></Author><Author ValidYN="Y"><LastName>Timofeeva</LastName><ForeName>M A</ForeName><Initials>MA</Initials></Author><Author ValidYN="Y"><LastName>Dubrovskii</LastName><ForeName>V 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